IPP60R190P6
vs
FCP190N65S3
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ONSEMI
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
onsemi
|
Avalanche Energy Rating (Eas) |
419 mJ
|
76 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
650 V
|
Drain Current-Max (ID) |
20.2 A
|
17 A
|
Drain-source On Resistance-Max |
0.19 Ω
|
0.19 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
57 A
|
42.5 A
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin (Sn)
|
Matte Tin (Sn) - annealed
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Manufacturer Package Code |
|
340AT
|
Factory Lead Time |
|
4 Weeks
|
Date Of Intro |
|
2017-06-23
|
Power Dissipation-Max (Abs) |
|
144 W
|
|
|
|
Compare IPP60R190P6 with alternatives
Compare FCP190N65S3 with alternatives