IPL65R070C7
vs
SIHG33N65EF-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY INTERTECHNOLOGY INC
Package Description
VSON-4
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Vishay
Avalanche Energy Rating (Eas)
171 mJ
508 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
650 V
Drain Current-Max (ID)
28 A
31.6 A
Drain-source On Resistance-Max
0.07 Ω
0.109 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PSSO-N4
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
2A
Number of Elements
1
1
Number of Terminals
4
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
145 A
93 A
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
19 Weeks
JEDEC-95 Code
TO-247AC
Compare IPL65R070C7 with alternatives
Compare SIHG33N65EF-GE3 with alternatives