IPI60R385CPXKSA1 vs SIHD12N50E-GE3 feature comparison

IPI60R385CPXKSA1 Infineon Technologies AG

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SIHD12N50E-GE3 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Part Package Code TO-262AA
Package Description GREEN, PLASTIC, TO-262, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 13 Weeks
Avalanche Energy Rating (Eas) 227 mJ 103 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 500 V
Drain Current-Max (ID) 9 A 10.5 A
Drain-source On Resistance-Max 0.385 Ω 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-252
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 27 A 21 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Feedback Cap-Max (Crss) 6 pF
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 114 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Turn-off Time-Max (toff) 82 ns
Turn-on Time-Max (ton) 58 ns

Compare IPI60R385CPXKSA1 with alternatives

Compare SIHD12N50E-GE3 with alternatives