SIHD12N50E-GE3 vs IPB65R420CFDATMA1 feature comparison

SIHD12N50E-GE3 Vishay Intertechnologies

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IPB65R420CFDATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 GREEN, PLASTIC, TO-263, D2PAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks 4 Weeks
Samacsys Manufacturer Vishay Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 103 mJ 227 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 650 V
Drain Current-Max (ID) 10.5 A 8.7 A
Drain-source On Resistance-Max 0.38 Ω 0.42 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 114 W
Pulsed Drain Current-Max (IDM) 21 A 27 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 82 ns
Turn-on Time-Max (ton) 58 ns
Base Number Matches 1 1
Pbfree Code No
Part Package Code D2PAK
Pin Count 4
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish TIN

Compare SIHD12N50E-GE3 with alternatives

Compare IPB65R420CFDATMA1 with alternatives