IPI60R099CPXKSA1
vs
SIHP33N60E-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Not Recommended
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
VISHAY INTERTECHNOLOGY INC
Part Package Code
TO-262AA
Package Description
IN-LINE, R-PSIP-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Vishay
Avalanche Energy Rating (Eas)
800 mJ
793 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
31 A
33 A
Drain-source On Resistance-Max
0.099 Ω
0.099 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-220AB
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
93 A
88 A
Qualification Status
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
14 Weeks
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
278 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IPI60R099CPXKSA1 with alternatives
Compare SIHP33N60E-GE3 with alternatives