IPI60R099CPXKSA1
vs
IPB60R125CP
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Not Recommended
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
TO-262AA
D2PAK
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Infineon
Avalanche Energy Rating (Eas)
800 mJ
708 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
31 A
25 A
Drain-source On Resistance-Max
0.099 Ω
0.125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-263AB
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
93 A
82 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
Tin (Sn)
Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Case Connection
DRAIN
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
245
Power Dissipation-Max (Abs)
208 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IPI60R099CPXKSA1 with alternatives
Compare IPB60R125CP with alternatives