IPD640N06LGBTMA1
vs
SHD220213
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SENSITRON SEMICONDUCTOR
|
Part Package Code |
TO-252AA
|
LCC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count |
4
|
5
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
43 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
18 A
|
17 A
|
Drain-source On Resistance-Max |
0.064 Ω
|
0.075 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
|
JESD-30 Code |
R-PSSO-G2
|
R-CBCC-N3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
72 A
|
68 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
GULL WING
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare IPD640N06LGBTMA1 with alternatives
Compare SHD220213 with alternatives