IPD640N06LGBTMA1
vs
IRL5NJ024PBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
CHIP CARRIER, R-CBCC-N3
Pin Count
4
3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
43 mJ
56 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
18 A
17 A
Drain-source On Resistance-Max
0.064 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-CBCC-N3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
68 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
NO LEAD
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Compare IPD640N06LGBTMA1 with alternatives