IPD30N06S4L23ATMA1 vs IPD220N06L3GBTMA1 feature comparison

IPD30N06S4L23ATMA1 Infineon Technologies AG

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IPD220N06L3GBTMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 18 mJ 13 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.023 Ω 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code TO-252AA
Pin Count 4
Additional Feature LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare IPD30N06S4L23ATMA1 with alternatives

Compare IPD220N06L3GBTMA1 with alternatives