Part Details for IPD30N06S4L23ATMA1 by Infineon Technologies AG
Overview of IPD30N06S4L23ATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPD30N06S4L23ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD30N06S4L23ATMA1TR-ND
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DigiKey | MOSFET N-CH 60V 30A TO252-3 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IPD30N06 - 55V-60V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 409 |
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$0.2118 / $0.2492 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 30A TO252-3 | 137300 |
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$0.2547 / $0.3820 | Buy Now |
Part Details for IPD30N06S4L23ATMA1
IPD30N06S4L23ATMA1 CAD Models
IPD30N06S4L23ATMA1 Part Data Attributes
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IPD30N06S4L23ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD30N06S4L23ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 18 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD30N06S4L23ATMA1
This table gives cross-reference parts and alternative options found for IPD30N06S4L23ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N06S4L23ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK9M24-60EX | Nexperia | $0.4745 | BUK9M24-60E - N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33@en-us | IPD30N06S4L23ATMA1 vs BUK9M24-60EX |
| IPD220N06L3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | IPD30N06S4L23ATMA1 vs IPD220N06L3G |
| IPB230N06L3GATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPD30N06S4L23ATMA1 vs IPB230N06L3GATMA1 |
| SP000453644 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | IPD30N06S4L23ATMA1 vs SP000453644 |
| AON7444 | Alpha & Omega Semiconductor | Check for Price | Power Field-Effect Transistor, 33A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, GREEN, DFN-8 | IPD30N06S4L23ATMA1 vs AON7444 |
| IPD220N06L3GBTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | IPD30N06S4L23ATMA1 vs IPD220N06L3GBTMA1 |
| IPD230N06LGBTMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, 3 PIN | IPD30N06S4L23ATMA1 vs IPD230N06LGBTMA1 |