IPD048N06L3GXT
vs
PSMN4R1-60YLX
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NEXPERIA
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SOP-8, 4 PIN
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
68 mJ
|
199 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
90 A
|
100 A
|
| Drain-source On Resistance-Max |
0.0048 Ω
|
0.0048 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252AA
|
MO-235
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
360 A
|
593 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SOIC
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
SOT669
|
| Factory Lead Time |
|
13 Weeks
|
| Samacsys Manufacturer |
|
Nexperia
|
| Additional Feature |
|
AVALANCHE RATED
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reference Standard |
|
IEC-60134
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare IPD048N06L3GXT with alternatives
Compare PSMN4R1-60YLX with alternatives