PSMN4R1-60YLX vs IPD048N06L3G feature comparison

PSMN4R1-60YLX Nexperia

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IPD048N06L3G Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA INFINEON TECHNOLOGIES AG
Part Package Code SOIC TO-252AA
Package Description SOP-8, 4 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 4 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 199 mJ 68 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 100 A 90 A
Drain-source On Resistance-Max 0.0048 Ω 0.0048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235 TO-252AA
JESD-30 Code R-PSSO-G4 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 593 A 360 A
Reference Standard IEC-60134
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 115 W
Qualification Status Not Qualified

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