IPB45N06S4L08ATMA3
vs
IPB80N06S2LH5ATMA1
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Not Recommended
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
GREEN, PLASTIC, TO-263, 3 PIN
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
Infineon
|
Avalanche Energy Rating (Eas) |
97 mJ
|
700 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
45 A
|
80 A
|
Drain-source On Resistance-Max |
0.0079 Ω
|
0.0062 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
180 A
|
320 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
|
|
|
Compare IPB45N06S4L08ATMA3 with alternatives
Compare IPB80N06S2LH5ATMA1 with alternatives