IPB021N04N
vs
IPB160N04S3-H2
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
TO-263
TO-263
Package Description
SMALL OUTLINE, R-PSSO-G6
SMALL OUTLINE, R-PSSO-G6
Pin Count
7
3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
898 mJ
898 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
160 A
160 A
Drain-source On Resistance-Max
0.0021 Ω
0.0021 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G6
R-PSSO-G6
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
214 W
214 W
Pulsed Drain Current-Max (IDM)
640 A
640 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Samacsys Manufacturer
Infineon
Additional Feature
ULTRA LOW RESISTANCE
JEDEC-95 Code
TO-263
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
Tin (Sn)
Compare IPB021N04N with alternatives
Compare IPB160N04S3-H2 with alternatives