IPB160N04S3-H2
vs
NP160N04TUJ-E1-AY
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
RENESAS ELECTRONICS CORP
|
Part Package Code |
TO-263
|
MP-25ZT
|
Package Description |
SMALL OUTLINE, R-PSSO-G6
|
SMALL OUTLINE, R-PSSO-G6
|
Pin Count |
3
|
7
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
Renesas Electronics
|
Additional Feature |
ULTRA LOW RESISTANCE
|
|
Avalanche Energy Rating (Eas) |
898 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
160 A
|
160 A
|
Drain-source On Resistance-Max |
0.0021 Ω
|
0.002 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263
|
|
JESD-30 Code |
R-PSSO-G6
|
R-PSSO-G6
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
6
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
214 W
|
250 W
|
Pulsed Drain Current-Max (IDM) |
640 A
|
640 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Manufacturer Package Code |
|
PRSS0008DB
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPB160N04S3-H2 with alternatives
Compare NP160N04TUJ-E1-AY with alternatives