IPB019N06L3GXT
vs
PSMN1R7-60BS
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
End Of Life
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
14 Weeks
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
634 mJ
913 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
120 A
120 A
Drain-source On Resistance-Max
0.0019 Ω
0.002 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
480 A
1076 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pin Count
3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
PURE TIN
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