IPB019N06L3GXT vs 934065175118 feature comparison

IPB019N06L3GXT Infineon Technologies AG

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934065175118 Nexperia

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code End Of Life Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 14 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 634 mJ 913 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 120 A 120 A
Drain-source On Resistance-Max 0.0019 Ω 0.002 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A 1076 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Date Of Intro 2017-02-01
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish TIN

Compare IPB019N06L3GXT with alternatives

Compare 934065175118 with alternatives