IDT8M656S50CB vs DPS8M656-85I feature comparison

IDT8M656S50CB Integrated Device Technology Inc

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DPS8M656-85I Twilight Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC TWILIGHT TECHNOLOGY INC
Reach Compliance Code not_compliant unknown
ECCN Code 3A001.A.2.C EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 50 ns 85 ns
I/O Type COMMON COMMON
JESD-30 Code R-XDIP-T40 R-XDMA-T40
JESD-609 Code e0
Memory Density 262144 bit 262144 bit
Memory IC Type SRAM MODULE SRAM MODULE
Memory Width 16 16
Number of Terminals 40 40
Number of Words 16384 words 16384 words
Number of Words Code 16000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -55 °C -40 °C
Organization 16KX16 16KX16
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC UNSPECIFIED
Package Code DIP DIP
Package Equivalence Code DIP40,.6 DIP40,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 Class B (Modified)
Standby Current-Max 0.08 A 0.0012 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.36 mA 0.64 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No
Package Description DIP, DIP40,.6
Number of Functions 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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