IDT8M656S50CB
vs
DPS8M656-55C
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
TWILIGHT TECHNOLOGY INC
Reach Compliance Code
not_compliant
unknown
ECCN Code
3A001.A.2.C
EAR99
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
50 ns
55 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-XDIP-T40
R-XDMA-T40
JESD-609 Code
e0
Memory Density
262144 bit
262144 bit
Memory IC Type
SRAM MODULE
SRAM MODULE
Memory Width
16
16
Number of Terminals
40
40
Number of Words
16384 words
16384 words
Number of Words Code
16000
16000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
70 °C
Operating Temperature-Min
-55 °C
Organization
16KX16
16KX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
CERAMIC
UNSPECIFIED
Package Code
DIP
DIP
Package Equivalence Code
DIP40,.6
DIP40,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883 Class B (Modified)
Standby Current-Max
0.08 A
0.0012 A
Standby Voltage-Min
4.5 V
2 V
Supply Current-Max
0.36 mA
0.64 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
1
2
Pbfree Code
Package Description
DIP, DIP40,.6
Number of Functions
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IDT8M656S50CB with alternatives
Compare DPS8M656-55C with alternatives