IDT70V631S12BCGI8
vs
70V631S12BCG
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
INTEGRATED DEVICE TECHNOLOGY INC
|
Part Package Code |
BGA
|
|
Package Description |
LBGA,
|
BGA,
|
Pin Count |
256
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Access Time-Max |
12 ns
|
12 ns
|
JESD-30 Code |
S-PBGA-B256
|
S-PBGA-B256
|
JESD-609 Code |
e1
|
|
Length |
17 mm
|
|
Memory Density |
4718592 bit
|
4718592 bit
|
Memory IC Type |
MULTI-PORT SRAM
|
DUAL-PORT SRAM
|
Memory Width |
18
|
18
|
Moisture Sensitivity Level |
3
|
|
Number of Functions |
1
|
1
|
Number of Terminals |
256
|
256
|
Number of Words |
262144 words
|
262144 words
|
Number of Words Code |
256000
|
256000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
256KX18
|
256KX18
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
BGA
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
|
Seated Height-Max |
1.5 mm
|
|
Supply Voltage-Max (Vsup) |
3.45 V
|
3.45 V
|
Supply Voltage-Min (Vsup) |
3.15 V
|
3.15 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
17 mm
|
|
Base Number Matches |
1
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IDT70V631S12BCGI8 with alternatives
Compare 70V631S12BCG with alternatives