HYM64V8005GCDL-60
vs
M466F0804BT1-L60
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
SIEMENS A G
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
,
|
DIMM, DIMM144,32
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.28
|
8542.32.00.28
|
Access Mode |
FAST PAGE WITH EDO
|
FAST PAGE WITH EDO
|
Access Time-Max |
60 ns
|
60 ns
|
Additional Feature |
RAS ONLY/CAS BEFORE RAS /SELF REFRESH
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
|
JESD-30 Code |
R-XZMA-N144
|
R-XDMA-N144
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
EDO DRAM MODULE
|
EDO DRAM MODULE
|
Memory Width |
64
|
64
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
144
|
144
|
Number of Words |
8388608 words
|
8388608 words
|
Number of Words Code |
8000000
|
8000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
8MX64
|
8MX64
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
ZIG-ZAG
|
DUAL
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
MODULE
|
Pin Count |
|
144
|
I/O Type |
|
COMMON
|
Output Characteristics |
|
3-STATE
|
Package Code |
|
DIMM
|
Package Equivalence Code |
|
DIMM144,32
|
Refresh Cycles |
|
4096
|
Standby Current-Max |
|
0.0024 A
|
Supply Current-Max |
|
0.448 mA
|
Terminal Pitch |
|
0.8 mm
|
|
|
|
Compare HYM64V8005GCDL-60 with alternatives
Compare M466F0804BT1-L60 with alternatives