HYB511000B-60
vs
EDI411024C80QM
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SIEMENS A G
ELECTRONIC DESIGNS INC
Package Description
,
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FAST PAGE
FAST PAGE
Access Time-Max
60 ns
80 ns
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code
R-PDIP-T18
R-PDIP-T18
Memory Density
1048576 bit
1048576 bit
Memory IC Type
FAST PAGE DRAM
FAST PAGE DRAM
Memory Width
1
1
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
18
18
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
125 °C
Operating Temperature-Min
-55 °C
Organization
1MX1
1MX1
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
512
1024
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Rohs Code
I/O Type
SEPARATE
JESD-609 Code
e0
Package Equivalence Code
DIP18,.3
Standby Current-Max
0.0005 A
Supply Current-Max
0.08 mA
Terminal Finish
TIN LEAD
Terminal Pitch
2.54 mm
Compare HYB511000B-60 with alternatives
Compare EDI411024C80QM with alternatives