HYB511000B-60 vs MSM511000B-60RS feature comparison

HYB511000B-60 Infineon Technologies AG

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MSM511000B-60RS LAPIS Semiconductor Co Ltd

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG LAPIS SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Time-Max 60 ns 60 ns
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PDIP-T18 R-PDIP-T18
JESD-609 Code e0 e0
Memory Density 1048576 bit 1048576 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM
Memory Width 1 1
Number of Terminals 18 18
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX1 1MX1
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP18,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Refresh Cycles 512 512
Standby Current-Max 0.001 A 0.001 A
Supply Current-Max 0.09 mA 0.09 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 2
Package Description DIP, DIP18,.3