HYB511000B-60
vs
MSM511000B-60RS
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
LAPIS SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Time-Max
60 ns
60 ns
I/O Type
SEPARATE
SEPARATE
JESD-30 Code
R-PDIP-T18
R-PDIP-T18
JESD-609 Code
e0
e0
Memory Density
1048576 bit
1048576 bit
Memory IC Type
FAST PAGE DRAM
FAST PAGE DRAM
Memory Width
1
1
Number of Terminals
18
18
Number of Words
1048576 words
1048576 words
Number of Words Code
1000000
1000000
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
1MX1
1MX1
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Equivalence Code
DIP18,.3
DIP18,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
512
512
Standby Current-Max
0.001 A
0.001 A
Supply Current-Max
0.09 mA
0.09 mA
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Package Description
DIP, DIP18,.3