HYB18T256160AC-3S
vs
K4T56163QI-ZLF70
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
QIMONDA AG
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA, BGA84,9X15,32
TFBGA,
Pin Count
84
84
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.24
8542.32.00.24
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.45 ns
0.4 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Length
12.5 mm
13 mm
Memory Density
268435456 bit
268435456 bit
Memory IC Type
DDR2 DRAM
SYNCHRONOUS DRAM
Memory Width
16
16
Moisture Sensitivity Level
1
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
84
84
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
16MX16
16MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
1.2 mm
Self Refresh
YES
YES
Sequential Burst Length
4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.157 mA
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Width
10 mm
9 mm
Base Number Matches
2
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare HYB18T256160AC-3S with alternatives
Compare K4T56163QI-ZLF70 with alternatives