Datasheets
HYB18T256160AC-3S by:

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84

Part Details for HYB18T256160AC-3S by Qimonda AG

Overview of HYB18T256160AC-3S by Qimonda AG

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Part Details for HYB18T256160AC-3S

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HYB18T256160AC-3S Part Data Attributes

HYB18T256160AC-3S Qimonda AG
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HYB18T256160AC-3S Qimonda AG DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer QIMONDA AG
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 268435456 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.157 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for HYB18T256160AC-3S

This table gives cross-reference parts and alternative options found for HYB18T256160AC-3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB18T256160AC-3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB18T256160AF-3 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG HYB18T256160AC-3S vs HYB18T256160AF-3
Part Number Description Manufacturer Compare
MT47H16M16FG-37E:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc HYB18T256160AC-3S vs MT47H16M16FG-37E:B
EDE2516AEBG-6E-E DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc HYB18T256160AC-3S vs EDE2516AEBG-6E-E
IS43DR16160B-3DBLI DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, TWBGA-84 Integrated Silicon Solution Inc HYB18T256160AC-3S vs IS43DR16160B-3DBLI
MT47H16M16FG-3:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc HYB18T256160AC-3S vs MT47H16M16FG-3:B
HYB18T256160BC-3 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG HYB18T256160AC-3S vs HYB18T256160BC-3
HYB18T256160BF-3 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG HYB18T256160AC-3S vs HYB18T256160BF-3
EDE2516ABSE-6C-E DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc HYB18T256160AC-3S vs EDE2516ABSE-6C-E
MT47H16M16BG-3LAT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18T256160AC-3S vs MT47H16M16BG-3LAT:B
HYI18TC256160AF-3S DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG HYB18T256160AC-3S vs HYI18TC256160AF-3S
MT47H16M16BG-3IT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc HYB18T256160AC-3S vs MT47H16M16BG-3IT:B

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