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HY5S5B2CLFP-6E vs K4M28323PH-HG1L0 feature comparison

HY5S5B2CLFP-6E SK Hynix Inc

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K4M28323PH-HG1L0 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.4 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz 111 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
JESD-609 Code e1
Length 13 mm 13 mm
Memory Density 268435456 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 8388608 words 4194304 words
Number of Words Code 8000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -25 °C -25 °C
Organization 8MX32 4MX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA VFBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1 mm 1 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.0003 A 0.0003 A
Supply Current-Max 0.065 mA 0.095 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL EXTENDED
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 8 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Output Characteristics 3-STATE
Peak Reflow Temperature (Cel) 260
Memory » DRAMs
Memory » DRAMs

Compare HY5S5B2CLFP-6E with alternatives

Compare K4M28323PH-HG1L0 with alternatives