HY5PS561621F-33 vs K4R571669E-GCT90 feature comparison

HY5PS561621F-33 SK Hynix Inc

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K4R571669E-GCT90 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SK HYNIX INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, VFBGA,
Pin Count 84 84
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST BLOCK ORIENTED PROTOCOL
Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH SELF CONTAINED REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1 e1
Length 14 mm 13.5 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR DRAM RAMBUS DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.1 V 2.63 V
Supply Voltage-Min (Vsup) 1.9 V 2.37 V
Supply Voltage-Nom (Vsup) 2 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 12 mm 9.3 mm
Base Number Matches 1 1
Rohs Code Yes
Moisture Sensitivity Level 2

Compare HY5PS561621F-33 with alternatives

Compare K4R571669E-GCT90 with alternatives