K4R571669E-GCT90
vs
K4T56163QI-ZCE60
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
VFBGA,
|
TFBGA,
|
Pin Count |
84
|
84
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.24
|
8542.32.00.24
|
Access Mode |
BLOCK ORIENTED PROTOCOL
|
FOUR BANK PAGE BURST
|
Additional Feature |
SELF CONTAINED REFRESH
|
AUTO/SELF REFRESH
|
JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
JESD-609 Code |
e1
|
|
Length |
13.5 mm
|
13 mm
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
RAMBUS DRAM
|
SYNCHRONOUS DRAM
|
Memory Width |
16
|
16
|
Moisture Sensitivity Level |
2
|
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
84
|
84
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Organization |
16MX16
|
16MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VFBGA
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Supply Voltage-Max (Vsup) |
2.63 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
2.37 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
2.5 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Terminal Finish |
TIN SILVER COPPER
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
9.3 mm
|
9 mm
|
Base Number Matches |
1
|
1
|
Access Time-Max |
|
0.45 ns
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare K4R571669E-GCT90 with alternatives
Compare K4T56163QI-ZCE60 with alternatives