K4R571669E-GCT90 vs K4T56163QI-ZCE60 feature comparison

K4R571669E-GCT90 Samsung Semiconductor

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K4T56163QI-ZCE60 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description VFBGA, TFBGA,
Pin Count 84 84
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode BLOCK ORIENTED PROTOCOL FOUR BANK PAGE BURST
Additional Feature SELF CONTAINED REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1
Length 13.5 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type RAMBUS DRAM SYNCHRONOUS DRAM
Memory Width 16 16
Moisture Sensitivity Level 2
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Organization 16MX16 16MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1 mm 1.2 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.63 V 1.9 V
Supply Voltage-Min (Vsup) 2.37 V 1.7 V
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 9.3 mm 9 mm
Base Number Matches 1 1
Access Time-Max 0.45 ns
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare K4R571669E-GCT90 with alternatives

Compare K4T56163QI-ZCE60 with alternatives