HY5DW283222AF-33
vs
K4D263238E-GC360
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SK HYNIX INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA, BGA144,12X12,32
LFBGA,
Pin Count
144
144
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.02
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.6 ns
0.6 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
300 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
S-PBGA-B144
S-PBGA-B144
Length
12 mm
12 mm
Memory Density
134217728 bit
134217728 bit
Memory IC Type
DDR1 DRAM
DDR DRAM
Memory Width
32
32
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
144
144
Number of Words
4194304 words
4194304 words
Number of Words Code
4000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
65 °C
Operating Temperature-Min
Organization
4MX32
4MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
LFBGA
Package Equivalence Code
BGA144,12X12,32
Package Shape
SQUARE
SQUARE
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
1.4 mm
Self Refresh
YES
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.025 A
Supply Current-Max
0.7 mA
Supply Voltage-Max (Vsup)
2.625 V
2.94 V
Supply Voltage-Min (Vsup)
2.375 V
2.375 V
Supply Voltage-Nom (Vsup)
2.5 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
12 mm
12 mm
Base Number Matches
1
1
Compare HY5DW283222AF-33 with alternatives
Compare K4D263238E-GC360 with alternatives