HY27SS08121M-FC
vs
K9F1208Q0B-HCB00
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SK HYNIX INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
,
|
VFBGA,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Base Number Matches |
5
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
BGA
|
| Pin Count |
|
63
|
| Access Time-Max |
|
35 ns
|
| Additional Feature |
|
CONTAINS ADDITIONAL 16M BIT SPARE MEMORY
|
| JESD-30 Code |
|
R-PBGA-B63
|
| JESD-609 Code |
|
e1
|
| Length |
|
13 mm
|
| Memory Density |
|
536870912 bit
|
| Memory IC Type |
|
FLASH
|
| Memory Width |
|
8
|
| Moisture Sensitivity Level |
|
2
|
| Number of Functions |
|
1
|
| Number of Terminals |
|
63
|
| Number of Words |
|
67108864 words
|
| Number of Words Code |
|
64000000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
|
64MX8
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Code |
|
VFBGA
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
|
PARALLEL
|
| Programming Voltage |
|
1.8 V
|
| Qualification Status |
|
Not Qualified
|
| Seated Height-Max |
|
0.9 mm
|
| Supply Voltage-Max (Vsup) |
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
|
1.8 V
|
| Surface Mount |
|
YES
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
COMMERCIAL
|
| Terminal Finish |
|
TIN SILVER COPPER
|
| Terminal Form |
|
BALL
|
| Terminal Pitch |
|
0.8 mm
|
| Terminal Position |
|
BOTTOM
|
| Width |
|
8.5 mm
|
|
|
|
Compare HY27SS08121M-FC with alternatives
Compare K9F1208Q0B-HCB00 with alternatives