HY23V16202D-100
vs
KM23V16005D-10
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SK HYNIX INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP, DIP42,.6
|
DIP,
|
| Pin Count |
42
|
42
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
100 ns
|
100 ns
|
| Alternate Memory Width |
8
|
8
|
| JESD-30 Code |
R-PDIP-T42
|
R-PDIP-T42
|
| Length |
52.451 mm
|
52.42 mm
|
| Memory Density |
16777216 bit
|
16777216 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
42
|
42
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
1MX16
|
1MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP42,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
4.826 mm
|
5.08 mm
|
| Standby Current-Max |
0.00005 A
|
|
| Supply Current-Max |
0.035 mA
|
0.06 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.3 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
15.24 mm
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
CAN ALSO BE OPERATED IN 3V TO 3.6V
|
|
|
|
Compare HY23V16202D-100 with alternatives
Compare KM23V16005D-10 with alternatives