HVC308AKRF
vs
BB833E6327
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
HITACHI LTD
|
ROCHESTER ELECTRONICS INC
|
| Package Description |
R-PDSO-F2
|
R-PDSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Breakdown Voltage-Min |
35 V
|
35 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance Ratio-Min |
7.12
|
11
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SOD
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD-323
|
| Diode Cap Tolerance |
|
8.11%
|
| Diode Capacitance-Nom |
|
9.3 pF
|
| Frequency Band |
|
S BAND
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
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