HUF76419D3 vs PHB21N06LT/T3 feature comparison

HUF76419D3 Fairchild Semiconductor Corporation

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PHB21N06LT/T3 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 20 A 19 A
Drain-source On Resistance-Max 0.043 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 34 mJ
Pulsed Drain Current-Max (IDM) 76 A

Compare HUF76419D3 with alternatives

Compare PHB21N06LT/T3 with alternatives