HUF75637SMD05R
vs
IXTY44N10T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SEMELAB LTD
IXYS CORP
Part Package Code
TO-276AA
TO-252AA
Package Description
CHIP CARRIER, R-CBCC-N3
SMALL OUTLINE, R-PSSO-G2
Pin Count
5
4
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
44 A
44 A
Drain-source On Resistance-Max
0.03 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-276AA
TO-252AA
JESD-30 Code
R-CBCC-N3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160 A
110 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
NO LEAD
GULL WING
Terminal Position
BOTTOM
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Rohs Code
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
250 mJ
Feedback Cap-Max (Crss)
47 pF
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
130 W
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Compare HUF75637SMD05R with alternatives
Compare IXTY44N10T with alternatives