HUF75333G3 vs HUF75345G3 feature comparison

HUF75333G3 Rochester Electronics LLC

Buy Now Datasheet

HUF75345G3 Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 56 A 75 A
Drain-source On Resistance-Max 0.016 Ω 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 5

Compare HUF75333G3 with alternatives

Compare HUF75345G3 with alternatives