HUF75333G3 vs HUF75343G3 feature comparison

HUF75333G3 Rochester Electronics LLC

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HUF75343G3 Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 56 A 75 A
Drain-source On Resistance-Max 0.016 Ω 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
ECCN Code EAR99
Case Connection DRAIN
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 270 W

Compare HUF75333G3 with alternatives

Compare HUF75343G3 with alternatives