HSU83TRF vs BAS321T/R feature comparison

HSU83TRF Renesas Electronics Corporation

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BAS321T/R NXP Semiconductors

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP NXP SEMICONDUCTORS
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Output Current-Max 0.1 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.1 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2
Part Package Code SC-76
Pin Count 2
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.3 W
Rep Pk Reverse Voltage-Max 250 V
Time@Peak Reflow Temperature-Max (s) 40

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