HSM276SRTL-E vs 1SS271 feature comparison

HSM276SRTL-E Renesas Electronics Corporation

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1SS271 Toshiba America Electronic Components

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Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.60 8541.10.00.80
Factory Lead Time 4 Weeks
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Capacitance-Max 0.9 pF 1 pF
Diode Element Material SILICON SILICON
Diode Type MIXER DIODE MIXER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN BISMUTH
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code SC-59
Package Description R-PDSO-G3
Pin Count 3
Samacsys Manufacturer Toshiba
Breakdown Voltage-Min 6 V
Forward Voltage-Max (VF) 0.55 V
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Output Current-Max 30 A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 0.5 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HSM276SRTL-E with alternatives

Compare 1SS271 with alternatives