HS1GALHM2G vs AM01 feature comparison

HS1GALHM2G Taiwan Semiconductor

Buy Now Datasheet

AM01 Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Date Of Intro 2020-06-05
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 0.98 V
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 35 A 35 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.05 µs
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 3

Compare HS1GALHM2G with alternatives

Compare AM01 with alternatives