HS1BLR3G vs ES1BT&R feature comparison

HS1BLR3G Taiwan Semiconductor

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ES1BT&R Continental Device India Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CONTINENTAL DEVICE INDIA LTD
Package Description SMA, 2 PIN
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS TR, 11 INCH: 5000
Application GENERAL PURPOSE SUPER FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.035 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Breakdown Voltage-Min 100 V
Forward Voltage-Max (VF) 0.95 V
JEDEC-95 Code DO-214AC
Reference Standard IATF 16949
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V

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