HN62W4416NFB-15
vs
K3N5U1000D-GC15
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
HITACHI LTD
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
SOIC
|
SOIC
|
Package Description |
SOP,
|
SOP,
|
Pin Count |
44
|
44
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Access Time-Max |
200 ns
|
150 ns
|
Additional Feature |
USER CONFIGURABLE AS 1M X 16; PAGE ACCESS TIME = 50NS
|
CONFIGURABLE AS 1M X 16
|
JESD-30 Code |
R-PDSO-G44
|
R-PDSO-G44
|
Length |
28.5 mm
|
28.5 mm
|
Memory Density |
4194304 bit
|
16777216 bit
|
Memory IC Type |
MASK ROM
|
MASK ROM
|
Memory Width |
8
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
44
|
44
|
Number of Words |
1048576 words
|
1048576 words
|
Number of Words Code |
1000000
|
1000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
512KX8
|
1MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
SOP
|
SOP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
3 mm
|
3.1 mm
|
Supply Current-Max |
0.07 mA
|
0.04 mA
|
Supply Voltage-Max (Vsup) |
5.5 V
|
3.3 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
1.27 mm
|
1.27 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
12.6 mm
|
12.6 mm
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
Alternate Memory Width |
|
8
|
Peak Reflow Temperature (Cel) |
|
225
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare HN62W4416NFB-15 with alternatives
Compare K3N5U1000D-GC15 with alternatives