HN62435P-15
vs
K3N3U1000D-DC120
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP,
|
| Pin Count |
40
|
40
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
200 ns
|
120 ns
|
| Additional Feature |
USER CONFIGURABLE AS 256K X 16; TTL COMPATIBLE I/O
|
|
| JESD-30 Code |
R-PDIP-T40
|
R-PDIP-T40
|
| Length |
52.8 mm
|
52.43 mm
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
8
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
40
|
40
|
| Number of Words |
524288 words
|
262144 words
|
| Number of Words Code |
512000
|
256000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
512KX8
|
256KX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.06 mm
|
5.08 mm
|
| Supply Current-Max |
0.05 mA
|
0.025 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
3.3 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
15.24 mm
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Alternate Memory Width |
|
8
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare HN62435P-15 with alternatives
Compare K3N3U1000D-DC120 with alternatives