HN62338BTT-10
vs
KM23C8000DG-10
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
TSOP2
|
SOIC
|
| Package Description |
TSOP2,
|
SOP, SOP32,.56
|
| Pin Count |
32
|
32
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
100 ns
|
100 ns
|
| JESD-30 Code |
R-PDSO-G32
|
R-PDSO-G32
|
| Length |
20.95 mm
|
20.47 mm
|
| Memory Density |
8388608 bit
|
8388608 bit
|
| Memory IC Type |
MASK ROM
|
MASK ROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
1MX8
|
1MX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP2
|
SOP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
3 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
10.16 mm
|
11.43 mm
|
| Base Number Matches |
2
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Package Equivalence Code |
|
SOP32,.56
|
| Standby Current-Max |
|
0.00005 A
|
| Supply Current-Max |
|
0.05 mA
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare HN62338BTT-10 with alternatives
Compare KM23C8000DG-10 with alternatives