HN62338BP-10 vs KM23C8000D feature comparison

HN62338BP-10 Renesas Electronics Corporation

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KM23C8000D Samsung Semiconductor

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code DIP DIP
Package Description DIP, DIP,
Pin Count 32 32
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 100 ns 100 ns
JESD-30 Code R-PDIP-T32 R-PDIP-T32
Length 41.9 mm 41.91 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX8 1MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.08 mm 5.08 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Width 15.24 mm 15.24 mm
Base Number Matches 2 1
Supply Current-Max 0.05 mA

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Compare KM23C8000D with alternatives