HN1C01FTE85R vs HN1C01FU-Y(5RMAA,F feature comparison

HN1C01FTE85R Toshiba America Electronic Components

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HN1C01FU-Y(5RMAA,F Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Collector Current-Max (IC) 0.15 A 0.15 A
Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 120 120
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.3 W
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 80 MHz 80 MHz
VCEsat-Max 0.25 V
Base Number Matches 1 1

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