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HM3-6514-5 vs CMM5114D3Z feature comparison

HM3-6514-5 Intersil Corporation

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CMM5114D3Z Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Package Description DIP, DIP18,.3 DIP, DIP18,.3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 370 ns
I/O Type COMMON COMMON
JESD-30 Code R-PDIP-T18 R-XDIP-T18
JESD-609 Code e0 e0
Memory Density 4096 bit 4096 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 4
Number of Terminals 18 18
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 1KX4 1KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP18,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.0002 A
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 2 2
Screening Level MIL-STD-883 Class B (Modified)
Supply Current-Max 0.006 mA
Total Dose 100k Rad(Si) V
Memory » SRAMs
Memory » SRAMs

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Compare CMM5114D3Z with alternatives