CMM5114D3Z
vs
CDM5114CD3
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERSIL CORP
|
Package Description |
DIP, DIP18,.3
|
DIP-18
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
I/O Type |
COMMON
|
COMMON
|
JESD-30 Code |
R-XDIP-T18
|
R-XDIP-T18
|
JESD-609 Code |
e0
|
e0
|
Memory Density |
4096 bit
|
4096 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
4
|
4
|
Number of Terminals |
18
|
18
|
Number of Words |
1024 words
|
1024 words
|
Number of Words Code |
1000
|
1000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Organization |
1KX4
|
1KX4
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
CERAMIC
|
CERAMIC
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP18,.3
|
DIP18,.3
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
MIL-STD-883 Class B (Modified)
|
MIL-STD-883 Class B (Modified)
|
Supply Current-Max |
0.006 mA
|
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Total Dose |
100k Rad(Si) V
|
|
Base Number Matches |
2
|
2
|
Access Time-Max |
|
250 ns
|
Standby Current-Max |
|
0.0005 A
|
Standby Voltage-Min |
|
2 V
|
|
|
|
Compare CMM5114D3Z with alternatives
Compare CDM5114CD3 with alternatives