HGTP2N120CN vs IXGH12N100A feature comparison

HGTP2N120CN Harris Semiconductor

Buy Now Datasheet

IXGH12N100A IXYS Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR IXYS CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS HIGH SPEED
Collector Current-Max (IC) 2 A 20 A
Collector-Emitter Voltage-Max 1200 V 1000 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-220AB TO-247AD
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-247AD
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Case Connection COLLECTOR
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 100 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10
Turn-off Time-Nom (toff) 1850 ns
Turn-on Time-Nom (ton) 300 ns

Compare IXGH12N100A with alternatives