HGTP12N60A4
vs
HGTG20N120CN
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INTERSIL CORP
|
INTERSIL CORP
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS
|
LOW CONDUCTION LOSS
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
54 A
|
20 A
|
Collector-Emitter Voltage-Max |
600 V
|
1200 V
|
Configuration |
SINGLE
|
SINGLE
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-220AB
|
TO-247
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
167 W
|
390 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
180 ns
|
|
Turn-on Time-Nom (ton) |
33 ns
|
|
Base Number Matches |
4
|
3
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
|
|
|
Compare HGTP12N60A4 with alternatives
Compare HGTG20N120CN with alternatives