HGTG18N120BN_NL
vs
APT35GN120SG
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
MICROSEMI CORP
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS, AVALANCHE RATED
|
|
Collector Current-Max (IC) |
54 A
|
94 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SINGLE
|
|
Fall Time-Max (tf) |
200 ns
|
|
Gate-Emitter Voltage-Max |
20 V
|
30 V
|
JEDEC-95 Code |
TO-247
|
|
JESD-30 Code |
R-PSFM-T3
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
390 W
|
379 W
|
Qualification Status |
Not Qualified
|
|
Rise Time-Max (tr) |
22 ns
|
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
|
Terminal Position |
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
MOTOR CONTROL
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Nom (toff) |
345 ns
|
|
Turn-on Time-Nom (ton) |
38 ns
|
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
No
|
Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
|
|
|
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